Structural and Optical Properties of Sr-Modified Bismuth Silicate Nanostructured Films Synthesized by Sol Gel Method

Document Type : Research Paper


Department of Metallurgy and Materials Engineering, University of Kashan, P.O. Box. 87317-53153, Ghotb Ravandi Blvd., Kashan, Iran.


In this work, the effects of strontium addition on the structure and optical properties of nanostructured bismuth silicate (Bi4Si3O12) thin films prepared via sol-gel were studied. At first, different sols containing the optimum ratio of precursors were synthesized, and then, the prepared sols were coated on the substrate via dip coating. The dip coated samples were dried at 100oC and, in order to obtain the crystalline structure, calcination was done at 700 oC for 1 h. The prepared thin films were characterized and analyzed via scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), atomic force microscope (AFM), and X-ray diffraction (XRD) analyses as well as ultraviolet-visible spectroscopy. The results showed that a homogeneous coating of bismuth silicate with the grain size in the range 35-50 nm could be formed. XRD analysis demonstrated the annealed sample at 700 oC composed of crystalline Bi4Si3O12 phase without any secondary phase. Investigation of the optical properties of the prepared thin films revealed that the addition of strontium decreased transparency from 82 to 78% and band gap from 3.61 to 3.32 eV.


1. Lira CA, Ramirez MO, Garcia Sole J, Caldino U. Photoluminescence of Bi4Si3O12:Er3+ crystal excited in the commercial laser diode emission region. Opt. Mater., 2007; 29(6): 605-9.
2. Gunter P. Holography, coherent light amplification and optical phase conjugation with photorefractive materials. Phys. Rep., 1982; 93(4): 199-299.
3. Mosquera L, Oliveira I, Frejlich J, Hernandes AC, LanfrediS, Carvalho JF. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals. J. Appl. Phys., 2001; 90(6): 2635-41.
4. Burkov VI, Kargin YF, Volkov VV, Zubovich NY. Spectroscopic and chirooptical properties of doped sillenite crystals. I. absorption and circular-dichroism spectra of Bi12SiO20 and Bi12TiO20 crystals doped with phosphorus and vanadium. Inorg. Mater., 1994; 30: 997-1001.
5. Klebansky EO, Kudzin AY, Pasalskii VM, Plyaka SN, Sadovskaya LY, Sokolyanskii GK. Thin sol-gel bismuth silicate films. Phys. Solid State, 1999; 41(6): 913-5.
6. Yamaguchi M, Nagatomo T, Masuda Y. Preparation of Bi4Ti3O12/Bi2SiO5/Si structures derived by metal organic decomposition technique. Jpn. J. Appl. Phys., 2001; 40(9B): 5559-63.
7. Sun S, Lu P, Fuierer PA. Oriented bismuth titanate thin films by single-solid-source metal-organic chemical vapour deposition. J. Cryst. Growth, 1999; 205(1): 177-84.
8. Wills LA, Feil WA, Wessels BW, Tonge LM, Marks TJ. Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition. J. Cryst. Growth, 1991; 107(1-4): 712-5.
9. Kim J, Tsurumi T, Kamiya T, Daimon M. Growth of bismuth silicate films on Si and its dielectric properties. J. Appl. Phys., 1994; 75(6): 2924-8.
10. Sato Y, Shoji I, Kurimura S, Taira T, Senguttuvan N, Ishii M, Koboyashi M. Optical absorption and emission spectroscopy of Nd:Bi4Si3O12 grown by Bridgeman method. Adv. Solid State Lasers, 2001; 50: 67-71.
11. Yamaguchi M., Hiraki K, Homma T, Nagatomo T, Masuda Y. Fabrication and properties of Bi2SiO thin films for MFIS structures. IEEE International Symposium on Application of Ferroelectrics, 2001; 12: 629-32.
12. Fouskova A, Cross LE. Dielectric properties of bismuth titanate. J. of Appl. Phys., 1970; 41(7): 2834-8.
13. Scott JF, Paz de Araujo CA,Melnick BM. Loss mechanisms in fine-grained ferroelectric ceramic thin films for ULSI memories (DRAMs). J. Alloys Compd., 1994; 211: 451-4.
14. Takenaka T, Sakata K. Grain orientation effects on electrical properties of bismuth layer structured ferroelectric Pb1-x(Na,Ce)x/2 Bi4Ti4O15 solid solution. J. Appl. Phys., 1984; 55(4): 1092-9.
15. Nagao YN, Mimura Y. Epitaxial growth of Bi12SiO20 films by chemical vapor deposition. Jpn. J. Appl. Phys., 1985; 24(12): 954-5.
16. Wei Q, Liu G, Zhou Z, Yang H, Zhuang J, Liu Q. Luminescence behaviors of a novel white-emitting phosphor Bi4Si3O12:Dy prepared via sol-gel route. J. Lumin., 2014; 145: 803-7.
17. Alonso JC, Diamant R, Poniatowski EH, Guasti MF, Munoz G, Camarillo I, Jouanne M, Morhange JF. Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition. Appl. Surf. Sci., 1997; 109-110: 359-61.
18. Okada T, Yahiro F, Uetsohara H, Nakata Y, Maeda M, Higuchi S. Deposition of highly oriented Bi12SiO20 thin films on Y-stabilized zirconia and SiO2 by pulsed-laser deposition. Appl. Phys., 1999; 69(Suppl 1): 723-6.
19. Thanabodeekij N, Gulari E,Wongkasemjit S. Bi12TiO20 synthesized directly from bismuth (III) nitrate pentahydrate and titanium glycolate and its activity.Powder Technol., 2005; 160(3): 203-8.
20. Pierre AC. Introduction to sol-gel processing. Springer Science + Business Media, New York, USA, 1998.
21. Owens G, Singh RK, Foroutan F, Alqaysi M, Han CM, Mahapatra C, Kim HW, Knowles JC. Sol-gel based materials for biomedical applications. Prog. Mater Sci., 2016; 77: 1-79.
22. Brinker CJ, Scherer GW. Sol-gel science; the physics and chemistry of sol-gel processing. Academic Press, INC, 1989.
23. Veber A, Kunej SP, Suvorov D. Synthesis and microstructural characterization of Bi12SiO20 (BSO) thin films produced by the sol-gel process. Ceram. Int., 2010; 36(1): 245-50.
24. Brinker CJ, Frye GC, Hurd AJ, Ashley CS. Fundamentals of sol-gel dip coating. Thin Solid Films, 1991; 201(1): 97-108.
25. Gao L, Zhai J,Yao X. The influence of Co doping on the dielectric, ferroelectric and ferromagnetic properties of Ba0.70Sr0.30TiO3 thin films. Appl. Surf. Sci., 2009; 255(8): 4521-5.
26.Chaim R, Levin M, Shlayer A, Estournes C. Sintering and densification of nanocrystalline ceramic oxide powders: a review. Adv. Appl. Ceram., 2008; 107(3): 159-169.
27. Cullity BD.Elements of X-ray diffraction.Addison Wesley pub., Menlo Park, CA, USA, 1978.
28. Zhou YF, Wang JC, Tang LA, Pan ZL, Chen NF, Chen WC, Huang YY, He W. Space growth studies of Ce-doped Bi12SiO20 single crystal. Mater. Sci. Eng. B, 2004; 113(3): 179-83.
29. Dimitrov V, Komatsu T. Classification of oxide glasses: a polarizability approach.J. Solid State Chem., 2005; 178(3): 831-46.
30. Lee S, Hwang S, Cha M, Shin H, Kim H. Role of copper ion in preventing silver nanoparticles forming in Bi2O3-B2O3-ZnO glass. J. Phys. Chem. Solids, 2008; 69(5-6): 1498-500.
31. Wood DL, Tauc J.Weak absorption tails in amorphous semiconductors. Phys. Rev. B: Condens. Matter B, 1972; 5(8): 3144-51.
32. Sokolov VO, Plotnichenko VG,Dianov EM. The origin of near-IR luminescence in bismuth-doped silica and germania glasses free of other dopants: first-principle study. Opt. Mater. Express, 2013; 3(8): 1059-74.