Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Document Type : Research Paper

Authors

Depatment of Physics, University of Mazandaran, Babolsar, Iran.

10.7508/jns.2012.03.006

Abstract

Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spectroscopy (EDX) was used to make  a  quantitative  chemical  analysis  of  an  unknown material. The  obtained  results  demonstrate  the  feasibility  of  using  high dielectric  constant  nanocomposite  PVP/NiO  as  gate  dielectric insulator in the organic thin film transistors (OTFTs).

Keywords

Journal of Nanostructures
Volume 2, Issue 3 - Serial Number 3
September 2012
Pages 313-316

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