Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Bahari, A.; Roodbari Shahmiri, M.; Derahkshi, M.; Jamali, M.

doi:10.7508/jns.2012.03.006

Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Document Type : Research Paper

Authors

A. Bahari

M. Roodbari Shahmiri

M. Derahkshi

M. Jamali

Depatment of Physics, University of Mazandaran, Babolsar, Iran.

10.7508/jns.2012.03.006

Abstract

Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 ºC. Structural properties and surface morphology of the hybrid films were investigated by X- Ray diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spectroscopy (EDX) was used to make a quantitative chemical analysis of an unknown material. The obtained results demonstrate the feasibility of using high dielectric constant nanocomposite PVP/NiO as gate dielectric insulator in the organic thin film transistors (OTFTs).

Keywords

Nanocomposite

Organic-inorganic hybrid

Gate dielectric

Organic thin film transistors (OTFTs)