Deconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method

Document Type : Research Paper

Author

Department of Physics, University of Mazandaran, Babolsar

10.7508/jns.2011.01.008

Abstract

The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental spectra. The up – and down- spin roles are considered for studying the nano structural properties of bulk, interface and surface states of ultra thin film, down to 2 nm and also appealing to the field of surface science. The obtained results show the above states can be determined and distinguished with spin orientations in FitXPS method.

Keywords

References

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Journal of Nanostructures
Volume 1, Issue 1 - Serial Number 1
January 2011
Pages 54-61

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