Department of Physics, University of Mazandaran, Babolsar,Iran
10.7508/jns.2014.01.002
Abstract
Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor) transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide) and PVA (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties were studied using the X-ray diffraction (XRD), Atomic force microscopy (AFM), Scanning electron microscopy (SEM), UV-Vis spectrophotometer and GPS 132 techniques. The obtained results indicated that the sample (5 g NiO and 0.02g PVA prepared at 30˚C, annealed in an oven at a temperature of 80˚C) can fill this gap due to its higher dielectric constant, better morphology, less rough surface and less leakage current.
Hayati, A., & Bahari, A. (2014). Investigation of Electrical and Optical Characteristics of Nanohybride Composite (Polyvinyl Alcohol / Nickel Oxide). Journal of Nanostructures, 4(1), 9-16. doi: 10.7508/jns.2014.01.002
MLA
A. Hayati; A. Bahari. "Investigation of Electrical and Optical Characteristics of Nanohybride Composite (Polyvinyl Alcohol / Nickel Oxide)", Journal of Nanostructures, 4, 1, 2014, 9-16. doi: 10.7508/jns.2014.01.002
HARVARD
Hayati, A., Bahari, A. (2014). 'Investigation of Electrical and Optical Characteristics of Nanohybride Composite (Polyvinyl Alcohol / Nickel Oxide)', Journal of Nanostructures, 4(1), pp. 9-16. doi: 10.7508/jns.2014.01.002
VANCOUVER
Hayati, A., Bahari, A. Investigation of Electrical and Optical Characteristics of Nanohybride Composite (Polyvinyl Alcohol / Nickel Oxide). Journal of Nanostructures, 2014; 4(1): 9-16. doi: 10.7508/jns.2014.01.002
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