Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance

Document Type : Research Paper

Authors

1 Electrical and Computer Engineering Department, K. N. Toosi University of Technology

2 Thin Films and Nanoelectronic Lab. Electrical and Computer Engineering Department, University of Tehran

10.7508/jns.2013.04.004

Abstract

The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency performance of FEDs is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications.

Keywords

References

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Journal of Nanostructures
Volume 3, Issue 4 - Serial Number 4
December 2013
Pages 411-414

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