1
Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
2
School of Electrical and Computer Engineering University of Tehran, Tehran
10.7508/jns.2012.04.010
Abstract
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in comparison with (110) and (111) wafers. As the channel length of ultra thin body SBMOSFET scales down to nanoscale regime, especially for high effective SBHs, quantum confinement is created along the channel and current propagates through discrete resonance states. We have studied the possibility of resonant tunneling in SBMOSFET. Resonant tunneling for (110) and (111) orientations appear at higher gate voltages.
Ahangari, Z., & Fathipour, M. (2012). Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study. Journal of Nanostructures, 2(4), 477-483. doi: 10.7508/jns.2012.04.010
MLA
Z. Ahangari; M. Fathipour. "Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study", Journal of Nanostructures, 2, 4, 2012, 477-483. doi: 10.7508/jns.2012.04.010
HARVARD
Ahangari, Z., Fathipour, M. (2012). 'Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study', Journal of Nanostructures, 2(4), pp. 477-483. doi: 10.7508/jns.2012.04.010
VANCOUVER
Ahangari, Z., Fathipour, M. Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study. Journal of Nanostructures, 2012; 2(4): 477-483. doi: 10.7508/jns.2012.04.010
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