University of Kashan Journal of Nanostructures 2251-7871 15 2 2025 04 01 The Role of Gallium in Changing the Electrical Properties and Transfer Characteristics of Indium Arsenide-Phosphorene Heterojunction Nano-TFETs 414 421 114778 10.22052/JNS.2025.02.003 EN Maryam Khorashadizadeh Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran Daryoosh Dideban Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran Department of Electrical and Computer Engineering, University of Kashan, Kashan, Iran Journal Article 2025 01 05 In this work, the gallium is introduced into the structure of indium arsenide and contributed to the formation of In0.53Ga0.47As. Simulations are performed to study the behavior of indium arsenide-phosphorene heterostructure tunneling field effect transistors (TFETs). Density functional theory (DFT) in combination with non-equilibrium Green’s function are utilized to reveal the electrical properties and transfer characteristics of the sample in question. Current changes in terms of applied bias voltage, indicates the multiplicity of negative differential resistance (NDRs) in the sample. At Vds = 0.5V, the ratio of peak to valley current (Ip/Iv) is observed to be 138, 10 while at Vds = 0.1V, Ip/Iv ratio reaches 16, 10.3. The subthreshold slope (S) at high and low drain bias is measured at 20, 17.2 mV/decade, respectively. transmission pathway shows the possible path of electrons, and in the on-state, the increase in the volume of the arrows is completely expected.  https://jns.kashanu.ac.ir/article_114778_f11bc23581733407c832dccf65923d5e.pdf