Document Type: Research Paper
Department of Physics, University of Mazandaran, Babolsar,Iran
Some issues; leakage, tunneling currents, boron diffusion are threatening SiO2 to be used as a good gate dielectric for the future of the CMOS (complementary metal- oxide- semiconductor) transistors. For finding an alternative and novel gate dielectric, the NiO (Nickel oxide) and PVA (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties were studied using the X-ray diffraction (XRD), Atomic force microscopy (AFM), Scanning electron microscopy (SEM), UV-Vis spectrophotometer and GPS 132 techniques. The obtained results indicated that the sample (5 g NiO and 0.02g PVA prepared at 30˚C, annealed in an oven at a temperature of 80˚C) can fill this gap due to its higher dielectric constant, better morphology, less rough surface and less leakage current.