Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance

Document Type: Research Paper

Authors

1 Electrical and Computer Engineering Department, K. N. Toosi University of Technology

2 Thin Films and Nanoelectronic Lab. Electrical and Computer Engineering Department, University of Tehran

10.7508/jns.2013.04.004

Abstract

The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency performance of FEDs is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications.

Keywords


[1] F. Raissi, IEEE Trans. Electron Devices 43(2) (1996) 362–365

[2] S. Cao, A. A. Salman, J. H. Chun, S. G. Beebe, M. M. Pelella, and R. W. Dutton, IEEE Trans. Electron Devices 57(3) (2010) 644–653.

[3] J. B. Ostinga, H. B. Heersche, X. Liu, A. F. Morpurgo, and L. M. K. Vandersypen, Solid-State Electron. 52 (2008) 1482–1485.

[4]  S. Cao, S. G. Beebe, A. A. Salman, M. M. Pelella, J. H. Chun, and R. W. Dutton, Montreal, QC: IEEE International Reliability Physics Symposium, 594–601 (26-30 April 2009).

[5] M. Amirmazlaghani and F. Raissi, IEICE Electronic Express 6(22) (2009) 1582–1586.

[6] Y. Yang, A. Gangopadhyay, Q. Li, and D. E. Ioannou, ISDRS, December (2009).

[7] N. Manavizadeh, F. Raissi, et al., IEEE Transaction on Electron Devices 58 (2011) 2378.

[8] N. Manavizadeh, F. Raissi, et al., Semiconductor Science and Technology 27 (2012) 6pp.

[9] I. Sheikhian and F. Raissi, IEEE Trans. Electron Devices 54(3) (2007) 613–617.

[10] N. Manavizadeh, et al, IUMRS-ICEM, Seoul,  Korea, 22-27 August (2010).

[11] R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol. 4(2) (2005) 153–158.